Pulse energy, repetition rate, pulse width
FS-G-1030B1030 nm near-infrared high-power pulsed laser
1030 nmFS-G-1030B is a 1030 nm Pulsed laser. Used for sapphire marking, ceramic cutting, semiconductor cutting, film scribing. <800fs @200KHz. Key specifications: operating mode Pulsed, output / average power 10~40 W, rep. rate (khz) 50-1000. View specifications, datasheet and enquiry options from Precisometer.
Specifications
FS-G-1030B
22 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 10~40 W |
| Beam / notes | <800 fs @200 kHz |
| Rep. rate (kHz) | 50-1000 |
| Pulse duration | <800 |
| Warm-up time (minutes) | <10 |
| Transverse mode | TEM00 |
| M2 factor | <1.3 |
| Polarization ratio | >100:1 Vertical |
| Cooled method | Water cooled |
| Operating temperature (℃) | 15-35 |
| Power supply (100-240VAC) | RAD1PS |
| Expected lifetime (hours) | >10000 |
| Wavelength (nm) | 1030±5 |
| Average power (W) | 10-40 (40W@200kHz) |
| Single pulse energy ( μJ) | 100-600 (600μJ@50kHz) |
| Peak power (MW) | 125-750 |
| Ave power stability (rms, 4 hours±3℃) | <2%, <1% |
| M² | <1.3 |
| Beam divergence, full angle (mrad) | <1.0 |
| Beam diameter at the aperture (1/e2,mm) | <3 |
| Beam height from base plate (mm) | 110 |
Applications
Uses named on this model’s datasheet.
- Sapphire marking
- Ceramic cutting
- Semiconductor cutting
- Film scribing
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