Pulse energy, repetition rate, pulse width
MDL-NS-13101310 nm infrared pulsed laser
1310 nmThe MDL-NS-1310 is a 1310 nm nanosecond direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. Pulse duration sets how briefly the energy is delivered, while repetition rate sets the interval between pulses; average power alone does not describe the peak intensity at the sample.
Specifications
MDL-NS-1310
22 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 1~10 mW |
| Beam / notes | Pulse width 10 ns~10 ms |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| Transverse mode | Multimode |
| Beam divergence, full angle (mrad) | <3.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Air cooled |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-H-FDA/PSU-H-LED |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 1310±20 |
| Peak power (mW) | 1-10 |
| Pulse width (FWHM) | 10ns-10ms |
| M² | <1.5 |
| Beam diameter at the aperture (1/e2,mm) | ~1.5 |
| Rep. rate | DC-30MHz |
| Rise Time (ns) | <5 |
| Fall Time (ns) | <3 |
| Modulation Depth (extinction ratio) | >1000000:1 |
| Beam height from base plate (mm) | 19 |
| Operating voltage (VDC) | 12V/3.34A |
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Model selection
Nearby series comparison
Compare MDL-NS-1310 with the closest available models in the Pulsed Lasers family.
| Selection parameter | MDL-NS-1310 (current) | MPL-H-1313 | MPL-U-1313-SU |
|---|---|---|---|
| Wavelength | 1310 nm | 1313 nm | 1313 nm |
| Optical power / pulse energy | 1~10 mW | 1~100 mW | 1~100 mW |
| Operating mode / pulse width | Pulsed | Passively Q-switched | Passively Q-switched |
| Beam quality | <1.5 | <1.5 | <2.0 |
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