Pulse energy, repetition rate, pulse width
PS-HG-1030B1030 nm near-infrared high-power pulsed laser
1030 nmPS-HG-1030B is a 1030 nm Pulsed laser. Used for sapphire marking, ceramic cutting, semiconductor cutting, film scribing. Picosecond Pulsed Infrared Laser. Key specifications: operating mode Pulsed, output / average power 5~50 W, single pulse energy (uj) 1-2.5. View specifications, datasheet and enquiry options from Precisometer.
Specifications
PS-HG-1030B
22 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 5~50 W |
| Beam / notes | Picosecond Pulsed Infrared Laser |
| Single pulse energy (uJ) | 1-2.5 |
| Ave power stability (rms, 4 hours±3℃) | <5%, <3% |
| Warm-up time (minutes) | <10 |
| Transverse mode | TEM00 |
| Beam divergence, full angle (mrad) | <1.5 |
| M2 | <1.3 |
| Polarization ratio | >100:1 Vertical |
| Cooled method | Water cooled |
| Operating temperature (℃) | 10-35 |
| Power supply (100-240VAC) | RAD1PS |
| Wavelength (nm) | 1030±1 |
| Average power (W) | 5-50 |
| Rep. rate (MHz) | 20-120 |
| Pulse duration (ps) | 10±1 |
| Peak power (kW) | 1-250 |
| Beam diameter at the aperture (1/e2,mm) | <3 |
| M² | <1.3 |
| Beam height from base plate (mm) | 122 |
| Expected lifetime (hours) | >10000 |
Applications
Uses named on this model’s datasheet.
- Sapphire marking
- Ceramic cutting
- Semiconductor cutting
- Film scribing
- Physics experiment
Need this configured?
Share wavelength, operating mode, output power or pulse energy, linewidth or pulse width, delivery, control, and safety requirements and we will qualify the matching configuration and lead time.
Related pulsed lasers
Compare the PS-HG-1030B with nearby pulsed lasers across the wavelength range.
