Pulse energy, repetition rate, pulse width
PS-FG-1030B1030 nm near-infrared high-power pulsed laser
1030 nmPS-FG-1030B is a 1030 nm Pulsed laser. Used for sapphire marking, ceramic cutting, semiconductor cutting, film scribing. Picosecond Pulsed Infrared Laser. Key specifications: operating mode Pulsed, output / average power 5~40 W, single pulse energy (uj) 10-80. View specifications, datasheet and enquiry options from Precisometer.
Specifications
PS-FG-1030B
23 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 5~40 W |
| Beam / notes | Picosecond Pulsed Infrared Laser |
| Single pulse energy (uJ) | 10-80 |
| pulse | duration, / high |
| Ave power stability (rms, 4 hours±3℃) | <5%, <3% |
| Warm-up time (minutes) | <10 |
| Transverse mode | TEM00 |
| Beam divergence, full angle (mrad) | <1.5 |
| M2 | <1.3 |
| Polarization ratio | >100:1 Vertical |
| Power supply (100-240VAC) | RAD1PS |
| Expected lifetime (hours) | >10000 |
| Wavelength (nm) | 1030±1 |
| Average power (W) | 5-40 |
| Rep. rate (kHz) | 500-1000 |
| Pulse duration (ps) | 10±1 |
| Peak power (MW) | 4-8 |
| Beam diameter at the aperture (1/e2,mm) | <3 |
| M² | <1.3 |
| Beam height from base plate (mm) | 122 |
| Cooled method | Water cooled |
| Operating temperature (℃) | 10-35 |
Applications
Uses named on this model’s datasheet.
- Sapphire marking
- Ceramic cutting
- Semiconductor cutting
- Film scribing
- Physics experiment
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