Pulse energy, repetition rate, pulse width
MDL-NS-655655 nm red pulsed laser
655 nmThe MDL-NS-655 is a 655 nm pulsed direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. Pulse duration sets how briefly the energy is delivered, while repetition rate sets the interval between pulses; average power alone does not describe the peak intensity at the sample.
Specifications
MDL-NS-655
21 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 1~180 mW |
| Beam / notes | Pulse width 10 ns~10 ms |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| M2 | <1.5 / <1.2 |
| Beam divergence, full angle (mrad) | <1.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Conduction |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-III-FDA/PSU-III-LED/PSU-A-D/PSU-III-OEM |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 655±10 |
| Transverse mode | Near TEM00 |
| M² | <1.2 |
| Beam diameter at the aperture (1/e2,mm) | ~1.2 |
| Polarization ratio | >50:1, (>100:1 optional) Horizontal±5 degree (Vertical optional) |
| Rep. rate | DC-30MHz |
| Fall Time (ns) | <3 |
| Modulation Depth (extinction ratio) | >1000000:1 |
| Beam height from base plate (mm) | 19 |
| Operating voltage (VDC) | 12V/3.34A |
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Model selection
Nearby series comparison
Compare MDL-NS-655 with the closest available models in the Pulsed Lasers family.
| Selection parameter | MDL-NS-655 (current) | MDL-PS-655 | PGL-D8-655 |
|---|---|---|---|
| Wavelength | 655 nm | 655 nm | 655 nm |
| Optical power / pulse energy | 1~180 mW | 1~50 mW | 1~50 mW |
| Operating mode / pulse width | Pulsed | Pulsed | Pulsed |
| Beam quality | <1.2 | Near TEM00 | Near TEM00 |
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