Industrial processing
EO-532-PS: Industrial processing depends on how optical energy is delivered to the target; 532 nm emission governs absorption, while the listed temporal parameter (1-60 uJ) governs peak intensity and heat deposition.
Pulse energy, repetition rate, pulse width
EO-532-PS is a 532 nm Pulsed laser. Used for industrial processing, physics experiment, scientific research. Cooling: Water cooled. Key specifications: pulse energy 1-60 uJ, repetition rate 1-1000 kHz, pulse width <15 ps. View specifications, datasheet and enquiry options from Precisometer.
Specifications
26 specification rows
| Pulse energy | 1-60 uJ |
|---|---|
| Repetition rate | 1-1000 kHz |
| Pulse width | <15 ps |
| Beam / notes | Cooling: Water cooled |
| Operating mode | Pulsed |
| Power stability (rms, 4 hours, ±3℃) | <5%, <3% |
| M2 | ≤1.4 |
| Pointing stability over temperature (urad/℃) | <50 |
| Polarization | 100:1 |
| Beam diameter (mm) | 1.5±0.5 |
| Beam divergence, full angle (mrad) | ≤2 |
| Cooled method | Water cooled |
| Warm-up time (minutes) | <15 |
| Operating temperature (℃) | 15-30 |
| Relative humidity | <60% |
| Power supply (110/220VAC) | PSU-EO-PS |
| Expected lifetime (hours) | >10000 |
| Wavelength (nm) | 532±1 |
| Average power (W) | 2-10@1MHz |
| Output energy (uJ) | 1-60@200kHz |
| Pulse duration (ps) | <15 |
| M² | ≤1.4 |
| Elipticity | >85% |
| Repetition frequency | 1-1000kHz |
| Control mode | Gate/burst/INT control |
| Beam height from base plate (mm) | 87 (EO-532PS-I); 90 (EO-532-PS-II) |
Application context
Applications named on this model’s datasheet, expanded with the model’s optical specifications.
EO-532-PS: Industrial processing depends on how optical energy is delivered to the target; 532 nm emission governs absorption, while the listed temporal parameter (1-60 uJ) governs peak intensity and heat deposition.
EO-532-PS: Physics experiment benefits from a stable, focusable source. 532 nm emission fixes the compatible coatings and detector response, while the listed beam characteristic (≤2) informs waist size and propagation.
EO-532-PS: 532 nm emission determines compatible optics, coatings and detectors for Scientific research. The catalogued beam parameter (≤2) helps predict how the source will focus and propagate through the instrument.
System integration
Use these checks to connect EO-532-PS to the surrounding optical, mechanical and control system. Every value shown is taken from this model's own specification record.
Technical FAQ
Cooled method: Water cooled · Operating temperature (℃): 15-30. Provide the stated cooling method and keep the laser-head base thermally coupled; temperature drift moves wavelength, output power and beam pointing.
M2: ≤1.4 · Polarization: 100:1. Size the downstream optics from the stated beam diameter and divergence rather than from the aperture of the housing, and confirm the polarisation state before specifying isolators or polarising optics.
Share wavelength, operating mode, output power or pulse energy, linewidth or pulse width, delivery, control, and safety requirements and we will qualify the matching configuration and lead time.
Model selection
Compare EO-532-PS with the closest available models in the Pulsed Lasers family. Confirm option-dependent values on the final configuration before ordering.
| Selection parameter | EO-532-PS (current) | FS-H- 5 32A | FS-H- 5 32B |
|---|---|---|---|
| Wavelength | 532 nm | 532 nm | 532 nm |
| Optical power / pulse energy | 1-60 uJ | 1-100 mW | 100-2000 mW |
| Operating mode / pulse width | 1-1000 kHz | Pulsed | Pulsed |
| Beam quality | ≤2 | TEM00 | TEM00 |
Compare the EO-532-PS with nearby pulsed lasers across the wavelength range.
Choosing a laser
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