Pulse energy, repetition rate, pulse width
MDL-NS-830830 nm near-infrared pulsed laser
830 nmThe MDL-NS-830 is a 830 nm nanosecond direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. Pulse duration sets how briefly the energy is delivered, while repetition rate sets the interval between pulses; average power alone does not describe the peak intensity at the sample.
Specifications
MDL-NS-830
23 specification rows
| Operating mode | Pulsed |
|---|---|
| Output / average power | 1~120 mW |
| Beam / notes | Pulse width 10 ns~10 ms |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| M2 | <1.5 |
| Beam divergence, full angle (mrad) | <1.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Conduction |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-III-FDA/PSU-III-LED/PSU-A-D/PSU-III-OEM |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 830±10 |
| Peak power (mW) | 1-120 |
| Pulse width (FWHM) | 10ns-10ms |
| Transverse mode | Near TEM00 |
| M² | <1.5 |
| Beam diameter at the aperture (1/e2,mm) | ~3.0 |
| Rep. rate | DC-20MHz |
| Rise Time (ns) | <3 |
| Fall Time (ns) | <3 |
| Modulation Depth (extinction ratio) | >1000000:1 |
| Beam height from base plate (mm) | 19 |
| Operating voltage (VDC) | 12V/3.34A |
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Model selection
Nearby series comparison
Compare MDL-NS-830 with the closest available models in the Pulsed Lasers family.
| Selection parameter | MDL-NS-830 (current) | MDL-NS-808 | MDL-PS-808 |
|---|---|---|---|
| Wavelength | 830 nm | 808 nm | 808 nm |
| Optical power / pulse energy | 1~120 mW | 1~100 mW | 1~60 mW |
| Operating mode / pulse width | Pulsed | Pulsed | Pulsed |
| Beam quality | <1.5 | <1.5 | Multimode |
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