Power, wavelength, beam profile, safety
DA320-SI Pulse Photodetector
DA320-SI amplified photodetector for laser pulse measurements.
Model Specifications
DA320-SI Pulse Photodetector
Detector specifications
| Parameter | Specification |
|---|---|
| Model | DA320-SI |
| Wavelength range | 320-1100 nm |
| Sensitive area | 75.4 mm²; Ø9.8 mm |
| Material | Si |
| Rise time | 35 ns |
| Bandwidth | DC-11 MHz |
| Published NEP field (inconsistent units) | 50 Ω load (6.10 kV/A)²; numeric NEP requires confirmation |
| Published gain field | 0.75 kV/A - 0.38 MV/A; confirm gain configuration |
| Operating temperature | 10-50 °C |
| Amplifier / bias | Fixed-gain low-noise amplifier |
| Load | Built-in 50 Ω load |
| Optical attenuation | Removable attenuator |
| Power supply | ±12 V regulated linear supply |
Measurement conditions
| Condition | Detail |
|---|---|
| Note 1 | Match optical power and spot size to the detector and attenuation. The oscilloscope, cable and termination affect the observed pulse response. |
| Note 2 | The published NEP cell contains gain-like units and a superscript 2, while the gain range has an unexplained trailing marker. No corrected NEP or gain interpretation is inferred. Confirm both values before quantitative low-noise measurements. |
Mechanical outlines
Need this configured?
Share measurement range, detector needs, interface requirements, mounting constraints and calibration needs, and we will qualify the matching configuration.