Photodiodes
12 components
Cooled Photodiode Extended InGaAs 1.2 – 2.6 µm
The CPOD serials cooled extended InGaAs photodiode provides ultra-low noise for detecting near-infrared light in the 1.2-2.6 µm range. These detectors are hermetically sealed to ensure longevity. Within the detector package, a thermoelectric cooler is integrated with options of 1, 2, and 3 stages, as well as integration with a MEMS chopper, significantly reducing background noise while maintaining a compact format. Additionally, a driving PCB with an amplifier is available for convenient use.
Material TypeTEC TypeIntegrated ChopperDetector Size1 datasheetCooled Photodiode InAsSb 2.2 – 6.6 µm
The CPOD serials cooled InAsSb photodiode is a photovltaic muti-junction device that provides reduced noise for detecting mid-infrared light in the 2.2-6.6 µm range. These detectors are integrated with one stage TEC cooler and hermetically sealed to ensure longevity. It has an AR coated silicon window and package in a TO39 can. It is fully compliant with RoHs. Additionally, a driving PCB with an amplifier is available for convenient use.
Material TypeTEC TypeIntegrated ChopperDetector Size1 datasheetCooled Photodiode InGaAs 0.85 – 1.7 µm
The CPOD series cooled InGaAs photodiode provides ultra-low noise for detecting near-infrared light in the 0.85- 1.7 µm range. These detectors are hermetically sealed to ensure longevity. Within the detector package, a thermoelectric cooler is integrated with options of 1, 2, and 3 stages, as well as integration with a MEMS chopper, significantly reducing background noise while maintaining a compact format. Additionally, a driving PCB with an amplifier is available for convenient use. Due to their high sensitivity to electrostatic discharge, warranty coverage applies only to fully metal covered modules the benchtops, which include proper protection. Other versions of the lasers and photodetectors are not covered by any warranty. Please use them with great caution.
Material TypeTEC TypeIntegrated ChopperDetector Size1 datasheetCooled Photodiode Si 0.4 – 1.1 µm
The CPOD serials cooled Silicon photodiode provides ultra-low noise for detecting from UV to near-infrared light in the 0.4-1.1 µm range. These detectors are hermetically sealed to ensure longevity. Within the detector package, a thermoelectric cooler is integrated with a 3 stage deep cooling as well as integration with a MEMS chopper, significantly reducing background noise while maintaining a compact format. A thermistor is also included in the package to sense the Si photodiode chip temperature for stable operation. It is designed for low-light-level detection applications. Additionally, we offer driving PCB consists a precision TEC temperature controller, an amplifier, and a detector heat sink for convenient use.
Material TypeTEC TypeIntegrated ChopperDetector Size1 datasheetMid Infrared Detector 2 – 5 µm
The CPOD serials lead selenide detectors (PbSs) provide enhanced sensitivity for detecting mid-infrared light in the 2-5 µm range. These detectors are hermetically sealed to ensure low leakage. Within the detector package, a thermoelectric cooler and a MEMS chopper are integrated, significantly reducing background noise while maintaining a compact format. Additionally, a driving PCB with an amplifier is available for convenient use. All stock detectors undergo a minimum four-week aging period. Experience with detectors manufactured through our proprietary process, which includes the aforementioned aging period, has shown the electrical characteristics to remain stable to within 10% for over a year. The typical response for PbSe detectors operates in the 0.5 to 3 micron spectral region with time constants below 400 μsec.
1 datasheetMid Infrared Detectors 1 – 3 µm
The CPOD serials lead sulfide detectors (PbS) provide enhanced sensitivity for detecting mid-infrared light in the 1-3 µm range. These detectors are hermetically sealed to ensure low leakage. Within the detector package, a thermoelectric cooler and a MEMS chopper are integrated, significantly reducing background noise while maintaining a compact format. Additionally, a driving PCB with an amplifier is available for convenient use. All stock detectors undergo a minimum four-week aging period. Experience with detectors manufactured through our proprietary process, which includes the aforementioned aging period, has shown the electrical characteristics to remain stable to within 10% for over a year. The typical response for PbS detectors operates in the 0.5 to 3 micron spectral region with time constants below 400 μsec.
1 datasheet
PbS Detector
PBCD We manufactures state-of-the-art lead sulfide devices (PbS) for room temperature operation as well as enhanced sensitivity thermoelectrically cooled operation. These devices can be supplied with integrated optical filters, pre-amplifiers or multiplexed amplifiers for high density arrays. Listed below are typical room temperature electrical characteristics of our Automated Chemical Processing (ACP) PbS detectors.
1 datasheet
PbS Detector Array
We manufactures state-of-the-art lead sensitivity Sulfide (PbS) for room temperature operation as well as thermoelectrically cooled operation for spectroscopy from 0.5 to 3 microns. The linear array is with 128 elements or 64 elements. The device can be supplied with integrated optical filters. It can be connected with pre-amplifiers or multiplexed amplifiers for applications. Thermoelectric cooler and thermistor can be built in for temperature stabilization. Listed below are the typical 128 element electrical characteristics of PbS Array of we Automated Chemical Processing (ACP) detectors.
1 datasheetPbSe Detector
PBCD <We manufactures state-of-the-art lead selenide devices (PbSe) for room temperature operation as well as enhanced sensitivity thermoelectrically cooled operation. These devices can be supplied with integrated optical filters, pre-amplifiers or multiplexed amplifiers for high density arrays. Listed below are typical room temperature electrical characteristics of Automated Chemical Processing (ACP) PbSe detectors.
1 datasheetPbSe Detector Array
We manufactures state-of-the-art lead sensitivity Selenide devices (PbSe) for room temperature operation as well as thermoelectrically cooled operation for spectroscopy from 1 to 5 microns. The linear arrays typically have 64 elements. The device can be supplied with integrated optical filters. They can be connected with pre-amplifiers or multiplexed amplifiers for applications. A thermoelectric cooler and thermistor can be built in for temperature stabilization. Listed below are the typical 64 element electrical characteristics of the PbSe Array of Our Automated Chemical Processing (ACP) detectors.
1 datasheet
Photodiode Extended InGaAs 0.9 – 2.2 µm
The PDTM Series of Extended-InGaAs Photodiodes provides reliable NIR detection from 0.9 to 2.2 µm with active-area options from 0.3 to 3.0 mm, allowing a clear speed–sensitivity trade-off (smaller areas = lower capacitance and faster response; larger areas = higher sensitivity). For plug-and-play use, an optional driver PCB integrates a low-noise transimpedance amplifier, eliminating external biasing and simplifying bench setup. Standard package and accessory options are available, with custom configurations on request.
WavelengthDetector SizeWindowAR Coated1 datasheetPhotodiode Extended InGaAs 0.9 – 2.6 µm
The PDTM Series of Extended-InGaAs Photodiodes provides reliable NIR detection from 0.9 to 2.6 µm with active-area options from 0.3 to 3.0 mm, allowing a clear speed–sensitivity trade-off (smaller areas = lower capacitance and faster response; larger areas = higher sensitivity). For plug-and-play use, an optional driver PCB integrates a low-noise transimpedance amplifier, eliminating external biasing and simplifying bench setup. Standard package and accessory options are available, with custom configurations on request.
WavelengthDetector SizeWindowAR Coated1 datasheet