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SLM, narrow linewidth, coherence

UV-FN-320-X320 nm UV narrow-linewidth single-frequency laser

320 nm

UV-FN-320-X is a 320 nm Single-Frequency laser. Used for high - precision measurement, biomedical detection, semiconductor microfabrication, flow cytometry. M²: <1.2. Key specifications: output / average power 1~50 mW, spectral linewidth <1 MHz, optical noise <0.25%. View specifications, datasheet and enquiry options from Precisometer.

Specifications

UV-FN-320-X

21 specification rows

Output / average power1~50 mW
Spectral linewidth<1 MHz
Optical noise<0.25%
<1.2
Operating modeCW
Power stability (rms, 4 hours±3℃)<1%, <0.5%
Transverse modeTEM00
Beam diameter at the aperture (1/e2, mm)~0.7
Beam divergence, full angle (mrad)<1.0
Polarization ratio>100:1, Vertical (Horizontal optional)
Pointing Stability Over Temperature(μrad/°C)<8
Operating Temperature (°C)10-35
Operating voltage (VDC)12V
Expected lifetime (hours)>10000
Wavelength (nm)320±1
Output power (mW)1-50
Noise of amplitude (rms, 20Hz-20MHz)<0.25%
Peak-to-Peak Noise (20 Hz to 20 kHz)<1%
Warm-up time (minutes)<10
Pointing Stability(μrad) (over 2 hours after warm-up and ±3°C)<30
Beam height from base plate (mm)19

Application context

Why this design is used

Applications named on this model’s datasheet, expanded with the model’s optical specifications.

High - precision measurement

UV-FN-320-X: High - precision measurement benefits from a stable, focusable source. 320 nm emission fixes the compatible coatings and detector response, while the listed beam characteristic (<1.2) informs waist size and propagation.

Biomedical detection

UV-FN-320-X: 320 nm emission determines compatible optics, coatings and detectors for Biomedical detection. The catalogued beam parameter (<1.2) helps predict how the source will focus and propagate through the instrument.

Semiconductor microfabrication

UV-FN-320-X: 320 nm emission determines compatible optics, coatings and detectors for Semiconductor microfabrication. The catalogued beam parameter (<1.2) helps predict how the source will focus and propagate through the instrument.

Flow cytometry

UV-FN-320-X: 320 nm emission can be matched to the absorption or excitation band used in Flow cytometry. The stated stability or noise figure (<0.25%) helps keep measured intensity changes attributable to the sample rather than source drift.

System integration

Integration and compatibility

Use these checks to connect UV-FN-320-X to the surrounding optical, mechanical and control system. Every value shown is taken from this model's own specification record.

Thermal management
Operating Temperature (°C): 10-35
Provide the stated cooling method and keep the laser-head base thermally coupled; temperature drift moves wavelength, output power and beam pointing.
Beam parameters at the output
M²: <1.2 · Transverse mode: TEM00
Size the downstream optics from the stated beam diameter and divergence rather than from the aperture of the housing, and confirm the polarisation state before specifying isolators or polarising optics.

Technical FAQ

Integration questions for UV-FN-320-X

What cooling does the UV-FN-320-X require?

Operating Temperature (°C): 10-35. Provide the stated cooling method and keep the laser-head base thermally coupled; temperature drift moves wavelength, output power and beam pointing.

What beam does the UV-FN-320-X deliver?

M²: <1.2 · Transverse mode: TEM00. Size the downstream optics from the stated beam diameter and divergence rather than from the aperture of the housing, and confirm the polarisation state before specifying isolators or polarising optics.

Need this configured?

Share wavelength, operating mode, output power or pulse energy, linewidth or pulse width, delivery, control, and safety requirements and we will qualify the matching configuration and lead time.

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Model selection

Nearby series comparison

Compare UV-FN-320-X with the closest available models in the Single-Frequency Lasers family. Confirm option-dependent values on the final configuration before ordering.

Selection parameterUV-FN-320-X (current)3 20MSL-R-320
Wavelength320 nm320 nm320 nm
Optical power / pulse energy1~50 mW1~30 mW50~300 mW
Operating mode / pulse widthCWConfirm for this modelCW
Beam quality<1.2<1.5<1.2