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Power stability, linewidth, beam quality

MDL-XF-808808 nm near-infrared CW laser

808 nm

The MDL-XF-808 is a 808 nm continuous-wave direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. The TTL and analog modulation options control different things: TTL gates the beam on and off, while analog control varies its intensity. Modulation bandwidth sets how quickly the source can follow a changing command.

Specifications

MDL-XF-808

15 specification rows

Output / average power8~12 W
Beam / notesHigh Stability Infrared Laser
Central wavelength (nm)808±5
Operating modeCW
Power stability (rms, 4 hours ± 3°C)<2%, <1%, <0.5%
Transverse modeMultimode
Dimensions of beam at the aperture (mm)~5×8
Beam divergence, full angle (mrad)<3.0
Warm-up time (minutes)<5
Cooled methodAir cooled
Beam height from base plate (mm)37
Operating temperature (℃)10-35
Power supply (100-240VAC)PSU-H-FDA/PSU-H-LED
Modulation optionDC-1kHz, 1kHz-10kHz, 10kHz-30kHz optional; TTL and Analog optional
Expected lifetime (hours)>10000

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Model selection

Nearby series comparison

Compare MDL-XF-808 with the closest available models in the CW Lasers family.

Selection parameterMDL-XF-808 (current)MDL-C-808TEM-LN-808
Wavelength808 nm808 nm808 nm
Optical power / pulse energy8~12 W1~30 mW1~400 mW
Operating mode / pulse widthCWCWCW
Beam qualityMultimode<1.5<1.1