Power stability, linewidth, beam quality
MLL-III-808L808 nm near-infrared CW laser
808 nmThe MLL-III-808L is a 808 nm continuous-wave direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. The TTL and analog modulation options control different things: TTL gates the beam on and off, while analog control varies its intensity. Modulation bandwidth sets how quickly the source can follow a changing command.
Specifications
MLL-III-808L
19 specification rows
| Output / average power | 1~100 mW |
|---|---|
| Beam / notes | Low Noise Infrared Laser |
| Operating mode | CW |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| Transverse mode | Near TEM00 |
| Noise of amplitude (rms, 20Hz-20MHz) | <1%, <0.5% |
| M2 | <1.5 |
| Beam divergence, full angle (mrad) | <1.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Conduction |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-III-FDA/PSU-III-LED/PSU-A-D/PSU-III-OEM |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 808±10 |
| M² | <1.5 |
| Beam diameter at the aperture (1/e2, mm) | ~3.5 |
| Polarization ratio | >10:1, (>50:1 optional) Horizontal±5 degree (Vertical optional) |
| Beam height from base plate (mm) | 24.8 |
| Modulation option | DC-1kHz, 1kHz-10kHz, 10kHz-30kHz, 30kHz-100kHz optional; TTL and Analog optional |
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Model selection
Nearby series comparison
Compare MLL-III-808L with the closest available models in the CW Lasers family.
| Selection parameter | MLL-III-808L (current) | MDL-C-808 | TEM-LN-808 |
|---|---|---|---|
| Wavelength | 808 nm | 808 nm | 808 nm |
| Optical power / pulse energy | 1~100 mW | 1~30 mW | 1~400 mW |
| Operating mode / pulse width | CW | CW | CW |
| Beam quality | <1.5 | <1.5 | <1.1 |
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