Power stability, linewidth, beam quality
MDL-III-808808 nm near-infrared CW laser
808 nmThe MDL-III-808 is a 808 nm continuous-wave direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. The TTL and analog modulation options control different things: TTL gates the beam on and off, while analog control varies its intensity. Modulation bandwidth sets how quickly the source can follow a changing command.
Specifications
MDL-III-808
15 specification rows
| Output / average power | 1~2500 mW |
|---|---|
| Beam / notes | High Stability Infrared Laser |
| Operating mode | CW |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| Transverse mode | Multimode |
| Beam divergence, full angle (mrad) | <3.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Conduction |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-III-FDA/PSU-III-LED/PSU-A-D/PSU-III-OEM |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 808±3 |
| Beam diameter at the aperture (mm) | ~5×8 |
| Beam height from base plate (mm) | 24.8 |
| Modulation option | DC-1kHz, 1kHz-10kHz, 10kHz-30kHz, 30kHz-100kHz optional; TTL and Analog optional |
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Model selection
Nearby series comparison
Compare MDL-III-808 with the closest available models in the CW Lasers family.
| Selection parameter | MDL-III-808 (current) | MDL-C-808 | TEM-LN-808 |
|---|---|---|---|
| Wavelength | 808 nm | 808 nm | 808 nm |
| Optical power / pulse energy | 1~2500 mW | 1~30 mW | 1~400 mW |
| Operating mode / pulse width | CW | CW | CW |
| Beam quality | Multimode | <1.5 | <1.1 |
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