Power stability, linewidth, beam quality
MDL-III-11501150 nm infrared CW laser
1150 nmThe MDL-III-1150 is a 1150 nm continuous-wave direct diode laser. Electrical current creates optical gain in a semiconductor junction, and the diode generates the laser light directly. Optical feedback selects the oscillating modes, while drive current and junction temperature affect output power and wavelength. The TTL and analog modulation options control different things: TTL gates the beam on and off, while analog control varies its intensity. Modulation bandwidth sets how quickly the source can follow a changing command.
Specifications
MDL-III-1150
15 specification rows
| Output / average power | 1~1000 mW |
|---|---|
| Beam / notes | Laser |
| Operating mode | CW |
| Power stability (rms, 4 hours ± 3°C) | <2%, <1%, <0.5% |
| Transverse mode | Multimode |
| Beam divergence, full angle (mrad) | <3.0 |
| Warm-up time (minutes) | <5 |
| Cooled method | Conduction |
| Operating temperature (°C) | 10-35 |
| Power supply (100-240VAC) | PSU-III-FDA/PSU-III-LED/PSU-A-D/PSU-III-OEM |
| Expected lifetime (hours) | >10000 |
| Central wavelength (nm) | 1150±10 |
| Beam diameter at the aperture (mm) | ~5×8 |
| Beam height from base plate (mm) | 24.8 |
| Modulation option | DC-1kHz, 1kHz-10kHz, 10kHz-30kHz, 30kHz-100kHz optional; TTL and Analog optional |
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Model selection
Nearby series comparison
Compare MDL-III-1150 with the closest available models in the CW Lasers family.
| Selection parameter | MDL-III-1150 (current) | MLL-III-1150 | MDL-1150(FC) |
|---|---|---|---|
| Wavelength | 1150 nm | 1150 nm | 1150 nm |
| Optical power / pulse energy | 1~1000 mW | 1~1000 mW | 1~800 mW |
| Operating mode / pulse width | CW | CW | — |
| Beam quality | Multimode | Multimode | — |
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